Estimation of percentage relaxation in Si/Si1-xGex strained-layer superlattices.
Autor: | Halliwell, M. A. G., Lyons, M. H., Davey, S. T., Hockly, M., Tuppen, C. G., Gibbings, C. J. |
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Zdroj: | Semiconductor Science & Technology; Jan1989, Vol. 4 Issue 1, p1-1, 1p |
Databáze: | Complementary Index |
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