Estimation of percentage relaxation in Si/Si1-xGex strained-layer superlattices.

Autor: Halliwell, M. A. G., Lyons, M. H., Davey, S. T., Hockly, M., Tuppen, C. G., Gibbings, C. J.
Zdroj: Semiconductor Science & Technology; Jan1989, Vol. 4 Issue 1, p1-1, 1p
Databáze: Complementary Index