| Autor: |
Shreiber, D., Cole, M. W., Enriquez, E., Hirsch, S. G., Ngo, E., Hubbard, C., Ivill, M., Chonglin Chen |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 9, p1-6, 6p, 3 Color Photographs, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
SrTiO3 (STO) thin films were grown simultaneously via the metal organic chemical vapor deposition (MOCVD) technique on two different substrates: platinized sapphire and platinized TiO2/SiO2/Si. The thin films were analyzed for stoichiometry, crystallinity, surface roughness, and average grain size. Dielectric properties of the thin films such as dielectric constant, loss, and leakage current characteristics were measured and compared. We demonstrate that the MOCVD technique is an appropriate method for fabrication of STO thin films with excellent structural, microstructural, dielectric, and insulation properties. Comparative analysis of the films yielded an unexpected result that the thin film with a higher mismatch in thermal expansion coefficient between the substrate (Si) and the deposited STO film yielded a higher dielectric constant with respect to that of STO/sapphire. The dielectric loss for both films were similar (tan δ = 0.005 at 100 kHz), however, the leakage current for the film with a higher dielectric constant was three orders of magnitude higher. An explanation of these results is presented and discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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