| Autor: |
Miranda, E., Jiménez, D., Tsurumaki-Fukuchi, A., Blasco, J., Yamada, H., Suñé, J., Sawa, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/25/2014, Vol. 105 Issue 8, p1-4, 4p, 4 Graphs |
| Abstrakt: |
The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and --1.9 V) exhibited by our devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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