| Autor: |
Hakkarainen, T., Pavelescu, E-M, Arstila, K., Dhaka, V. D. S., Hakulinen, T., Herda, R., Konttinen, J., Tkachenko, N., Lemmetyinen, H., Keinonen, J., Pessa, M. |
| Zdroj: |
Journal of Physics D: Applied Physics; 4/7/2005, Vol. 38 Issue 7, p1-1, 1p |
| Abstrakt: |
Optical properties of Ni+ irradiated and thermally annealed InGaAs/GaAs multiple quantum wells and semiconductor saturable absorber mirrors (SESAMs) have been studied using photoluminescence (PL) and non-linear reflectivity measurements. Rapid decrease of PL intensity and lifetime with increasing irradiation dose was accompanied by undesirable degradation of the non-linear optical properties of SESAMs. However, some of the irradiation-created defects could be removed and the non-linear optical properties improved by rapid thermal annealing. The combination of ion irradiation and annealing provided a selective method for controlling the absorption recovery time of SESAMs while preserving the non-linear properties. Irradiation with 1012 cm−2 of 6 MeV Ni+ ions and 1 s annealing at 400°C led to an absorption recovery time of ∼1 ps while the modulation depth, the non-saturable losses and the saturation fluence were all close to their as-grown values. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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