| Autor: |
Nishiuchi, Kenichi, Yamada, Noboru, Akahira, Nobuo, Takenaga, Mutsuo, Akutagawa, Ryutaro |
| Předmět: |
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| Zdroj: |
Review of Scientific Instruments; Jun92, Vol. 63 Issue 6, p3425, 6p |
| Abstrakt: |
An extremely rapid heating and quenching instrument for thin-film materials was prepared, which established a quenching speed of 1011 K/s for a 20-nm GeSbTe film. It contains a thin-film device part and a laser diode/electro-optical section; the former is composed of the thin film which absorbs 830-nm laser light sandwiched between a transparent and highly heat-conductive ZnS-SiO2 mixture layer. It is designed to produce a high-temperature gradient between the two layers at the moment of laser exposure. In the latter, the laser beam is designed to be automatically focused with a half-value width of 1 μm at the thin-film surface to be heated. The beam exposure condition is variable: the pulse width 10 ns–10 μs, and the beam power amplitude, 0.5–30 mW. The reflectivity of the beam exposure part can be monitored in situ during the exposure as well as before and after the exposure using the same laser diode. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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