Autor: |
Wheeler, Edward D., Boone, Jack L., Drewniak, James L. |
Předmět: |
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Zdroj: |
Review of Scientific Instruments; Dec1994, Vol. 65 Issue 12, p3844, 4p |
Abstrakt: |
A radio frequency measurement technique for measuring the bulk resistivity of II-VI compound semiconductors is described. Wafers of n-type CdS are used to demonstrate the technique. An equivalent circuit model is introduced which predicts a frequency dependence for the CdS wafer impedance which agrees well with the experiment. The model assumes a broad distribution of relaxation times associated with the polarization. The radio frequency method gives values for the resistivity within 15% of four point probe measurements for the lower resistivity wafers, and within 5% for the higher resistivity wafers. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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