MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility.
| Autor: | Furuya, K., Machida, N., Igarashi, M., Nakagawa, R., Kashima, I., Ishida, M., Miyamoto, Y. |
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| Zdroj: | Journal of Physics: Conference Series; 2006, Vol. 38 Issue 1, p1-1, 1p |
| Databáze: | Complementary Index |
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