| Autor: |
Lomenzo, Patrick D., Takmeel, Qanit, Chuanzhen Zhou, Yang Liu, Fancher, Chris M., Jones, Jacob L., Moghaddam, Saeed, Nishida, Toshikazu |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/18/2014, Vol. 105 Issue 7, p1-5, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectricinsulator- semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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