| Autor: |
Davidovic, M., Wimbauer, T., Zimmermann, H. |
| Předmět: |
|
| Zdroj: |
Electronics Letters (Wiley-Blackwell); 8/14/2014, Vol. 50 Issue 17, p1229-1230, 2p, 1 Diagram, 3 Graphs |
| Abstrakt: |
A vertical pin photodiode with a thick intrinsic layer is integrated in a 0.15 μm CMOS process. A deep n-well (N-ISO) allows increase of the reverse voltage of the pin photodiode far above the circuit supply voltage enabling a high drift velocity. Therefore, the large thickness of the intrinsic layer and the high reverse voltage lead to a high dynamic quantum efficiency and to a high bandwidth. The maximum responsivity of 0.46 A/W was measured at 730 nm corresponding to a quantum efficiency of 78.3%. For 850 nm, the –3 dB bandwidth of 700 MHz and for 650 nm the –3 dB bandwidth of 1.2 GHz was obtained at –8 V. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text