| Autor: |
Dondapati, Hareesh, Ha, Duc, Jenrette, Erin, Bo Xiao, Pradhan, A. K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/4/2014, Vol. 105 Issue 5, p1-5, 5p, 1 Color Photograph, 1 Black and White Photograph, 1 Diagram, 3 Graphs |
| Abstrakt: |
We demonstrate high performance chemical bath deposited CdS thin-film transistors (TFTs) using atomic layer deposited ZrO2 based high-k gate dielectric material. Our unique way of isolation of the CdS-based TFTs devices yielded significantly low leakage current as well as remarkable lower operating voltages (<5 V) which is four times smaller than the devices reported on CdS-based TFTs using SiO2 gate dielectric. Upon thermal annealing, the devices demonstrate even higher performance, including μFE exceeding 4 ± 0.2 cm² V-1S-1, threshold voltage VT of 3.8 V, and Ion-off of 104-105, which hold much promise for applications in future electronic and optical devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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