| Autor: |
Junda Yan, Xiaoliang Wang, Quan Wang, Shenqi Qu, Hongling Xiao, Enchao Peng, He Kang, Cuimei Wang, Chun Feng, Haibo Yin, Lijuan Jiang, Baiquan Li, Zhanguo Wang, Xun Hou |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 5, p054502-1-054502-7, 7p, 13 Graphs |
| Abstrakt: |
In this paper, a numerical study of InxGa1–xN/AlyGa1–yN/GaN heterostructure is presented. The dependence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) sheet densities on variables, such as InxGa1–xN layer thickness and In content, and AlyGa1–yN barrier layer thickness and Al content, are systematically investigated. The effect of P-type doping in InxGa1–xN on 2DEG and 2DHG sheet densities in this heterostructure is also studied. It is shown that the strong reverse electric field in InxGa1–xN cap layer contributes to the depletion of 2DEG at the AlyGa1-yN/GaN interface. When InxGa1–xN layer thickness and In content increases, 2DEG sheet density decreases significantly. P-type doping shows less influence on 2DEG compared to the polarization electric field in InxGa1–xN layer. In addition, there exist critical values for all the variables beyond which 2DHG appears at the interface of InxGa1–xN/AlyGa1–yN. Once 2DHG appears, it will prevent 2DEG from being further depleted. With proper design of AlyGa1–yN layer, the coexistence of 2DEG and 2DHG in InxGa1–xN/AlyGa1–yN/GaN structure can be avoided, showing that this structure has great potential in the fabrication of enhancement mode (E-mode) high electron mobility transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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