| Autor: |
Ivanov, O. N., Lyubushkin, R. A., Soklakova, O. N. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2014, Vol. 6 Issue 3, p03064-1-03064-5, 5p |
| Abstrakt: |
The bulk nanostructural Bi2Te3 based material was prepared by microwave assisted solvothermal method and hot isostatic pressure. Optimal synthesis conditions of the Bi2Te3 nanopowder were found. It was established that hot isostatic pressing of the nanopowders at the temperature of 400 °C and the pressures of 2, 4, 6 and 8 GPa allowed us to prepare the homogeneous and dense Bi2Te3 based material with the mean grain size of ~ 50 nm. It is found that an electrical resistivity increases as the mean grain size of the material under study decreases. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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