| Autor: |
Gibert, T., Gonthiez, T. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/2003, Vol. 93 Issue 10, p5959, 7p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Soft ultraviolet laser desorption of neutral and ionized Si atoms was investigated at 355 nm for fluences ranging from the desorption threshold (85 mJ/cm[SUB2] up to 165 mJ/cm[SUB2]. The sensitivity of resonance ionization mass spectrometry enabled the number of sputtered particles to be studied at a very low emission level corresponding to only several 100 atoms. For such a low emission yield, the ejected atoms keeps the memory of the laser-surface interaction mechanism during their flight in the ultrahigh vacuum condition. The velocity distribution of neutrals was measured for different fluences and were well fitted by a set of 2 Maxwellian functions at each fluence. From these fits it appears that the primary mechanisms involved in laser desorption are both a thermal process and an electronic one. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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