| Autor: |
Kula, Witold, Wolfman, Jerome, Ounadjela, Kamel, Chen, Eugene, Koutny, William |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/2003, Vol. 93 Issue 10, p8373, 3p, 1 Diagram, 7 Graphs |
| Abstrakt: |
We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ∼40% at 300 mV, resistance -- area product (RA) ∼1-3 kΩ μm [SUP2], low intrinsic interlayer coupling (H[SUBin]) ∼2-3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal -- oxide -- semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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