Carrier heating and the power independent linewidth in semiconductor lasers.

Autor: Ongstad, Andrew P., Dente, Gregory C.
Předmět:
Zdroj: Journal of Applied Physics; 7/1/1997, Vol. 82 Issue 1, p84, 5p, 1 Chart, 1 Graph
Abstrakt: Presents linewidth measurements on AlGaAs double heterostructure lasers as a function of temperature and power. Model to explain both the origin of the power-independent linewidth, and the reasons why its magnitude increases with decreasing lattice temperature.
Databáze: Complementary Index