Tensile and compressive strain relief in InxGa1-xAs epilayers grown on InP probed...
| Autor: | Groenen, J., Landa, G. |
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| Zdroj: | Journal of Applied Physics; 7/15/1997, Vol. 82 Issue 2, p803, 7p, 1 Chart, 7 Graphs |
| Abstrakt: | Studies with the use of Raman scattering strain relaxation in strained InxGa1-xAs layers grown on In0.53Ga0.47As/InP. Optical phonons in InxGa1-xAs alloys; Alloying and strain effects; Disorder induced scattering; Tensile and compressive strained InxGa1-xAs layers; Defect-induced line broadening. |
| Databáze: | Complementary Index |
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