Dynamics of Charge Carrier Recombination and Capture in Laser Nanostructures with InGaAsSb/AlGaAsSb Quantum Wells.

Autor: Vinnichenko, Maxim Ya., Vorobjev, Leonid E., Firsov, Dmitry A., Mashko, Marina O., Sofronov, Anton N., Shterengas, Leon, Belenky, Gregory
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Zdroj: AIP Conference Proceedings; Dec2013, Vol. 1566 Issue 1, p480-481, 2p
Abstrakt: Time dynamics of photoluminescence intensity was studied in InGaAsSb/AlGaAsSb quantum wells with different compositions of the barrier solid solution and with different width of the quantum wells. The time of charge carrier capture in quantum wells, the energy relaxation times, lifetime related to resonant Auger recombination were estimated. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index