Dopant-selective etch stops in 6H and 3C SiC.
| Autor: | Shor, J.S., Kurtz, A.D. |
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| Zdroj: | Journal of Applied Physics; 2/1/1997, Vol. 81 Issue 3, p1546, 6p, 6 Black and White Photographs, 1 Diagram, 6 Graphs |
| Abstrakt: | Describes a novel photoelectrochemical etching process for 6H- and 3C-SiC semiconductors. Basis for the etch-stop mechanism; Dissolution of silicon carbide. |
| Databáze: | Complementary Index |
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