| Autor: |
Himwas, C., den Hertog, M., Bellet-Amalric, E., Songmuang, R., Donatini, F., Le Si Dang, Monroy, E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 116 Issue 2, p023502-1-023502-8, 8p, 2 Charts, 7 Graphs |
| Abstrakt: |
We report on the identification of an optimum deposited amount of AlGaN in AlGaN/AlN quantum dot (QD) superlattices grown by molecular-beam epitaxy, which grants maximum luminescence at room temperature by finding a compromise between the designs providing maximum internal quantum efficiency (60%) and maximum QD density (9.0 × 1011cm-2). The average Al composition in the QDs is estimated at 10.6%±0.8% by combining x-ray diffraction measurements with three-dimensional calculations of the strain distribution. The effect of the variation of the QD height/base-diameter ratio on the interband and intraband optical properties was explored by fitting the experimental data with three-dimensional calculations of the band diagram and quantum confined states. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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