| Autor: |
Hamel, John S., Alison, Rodney J. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; May97, Vol. 44 Issue 5, p693, 7p, 1 Diagram, 2 Graphs |
| Abstrakt: |
Presents a simple compact model, suitable for simulation of quantitative determination of the impact of neutral base recombination on the small signal alternating current output resistance of SiGe Heterojunction Bipolar Transistors (HBT's). Analysis on the impact of neutral base recombination; Model parameter for the output resistance of a transistor of neutral base recombination; Relationship between output resistance and base transit times; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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