| Autor: |
Kobeleva, S. P., Anfimov, I. M., Yurchuk, S. Y., Turutin, A. V. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2013, Vol. 5 Issue 4, p04021-1-04021-3, 3p |
| Abstrakt: |
The results of experimental and theoretical researches of phosphorus distribution in the first cascade of a multi cascade solar cell based on nanoscale structures AIIIBV / Ge are presented. Secondary ion mass spectroscopy has been applied to obtain profiles of phosphorus and gallium in In0.01Ga0.99As / In0.56Ga0.44P / Ge heterostructure. In the germanium surface there is a thin layer of about 26 nm, in which the gallium concentration exceeds the concentration of phosphorus. Therefore a nanoscale p-n junction forms that does not have a significant impact on the solar cells performance at room temperature. Phosphorus diffusion is much slower in this area than in area with electronic conductivity. The main p-n junction is formed at a distance of 130- 150 nm from the surface of the germanium. Diffusivity of gallium (DGa = 1,4∙10-15 cm²/s) is markedly higher than described in a literature. Diffusivity of P increase from DP = 3∙10-15 cm²/s on the boundary of the heterostructure In0, 49Ga0, 51P to DP = 5,2∙10-14 cm²/s in n-type Ge. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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