| Autor: |
McAndrew, Colin C., Lorenzo-Cassagnes, Alexandra, Goyhenetche, Philippe, Pigott, John, Yao, Wei, Gildenblat, Gennady, Victory, James |
| Zdroj: |
IEEE Solid-State Circuits Magazine; May2014, Vol. 6 Issue 2, p35-46, 12p |
| Abstrakt: |
Lateral double-diffused metal-oxide-semiconductor (LDMOS) transistors are key interfaces between digital CMOS circuits and the real analog world; they are widely used in high-voltage and high-current applications, but they can be exceedingly difficult to model accurately. This article reviews recent advances in the compact modeling of LDMOS transistors, with an emphasis on the surface-potential-based high-voltage MOS (SP-HV) model and its capabilities. Detailed physical analysis of experimentally observed complexities in LDMOS behavior are reviewed and the relevance to IC design of the advanced modeling capabilities of SP-HV are detailed. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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