Ferroelectric domain structure of NaNbO3 epitaxial thin films grown on (110) DyScO3 substrates.

Autor: Schmidbauer, Martin, Sellmann, Jan, Braun, Dorothee, Kwasniewski, Albert, Duk, Andreas, Schwarzkopf, Jutta
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Zdroj: Physica Status Solidi - Rapid Research Letters; Jun2014, Vol. 8 Issue 6, p522-526, 5p
Abstrakt: Thin films of NaNbO3 have been grown under anisotropic tensile strain on orthorhombic (110) DyScO3 (DSO) substrates. Ferroelectric domain formation starts at about 6 nm film thickness and a periodic one‐dimensional pattern of type a1/a2/a1/a2 is formed with exclusive in‐plane electric polarization and individual domains aligned along the [001]DSO direction. With the onset of plastic strain relaxation at about 27 nm film thickness the one‐dimensional domain pattern transforms into a two‐dimensional array with domains aligned also along the $[1\bar 10]_{\rm DSO} $ direction and an additional out‐of‐plane component of the electrical polarization. With increasing film thickness the pseudocubic NaNbO3 unit cells exhibit an in‐plane monoclinic distortion which is very small for thin films and approaches the bulk value of 0.67° at film thicknesses larger than 130 nm. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Part of Focus Issue on “Functional Oxides” (Eds.: T. Frauenheim, J. M. Knaup, P. Broqvist, S. Ramanathan) The ferroelectric domain structure in strained NaNbO3 thin films grown on DyScO3 substrate is investigated. Structural properties of the domains and direction of the polarization vector vary with film thickness and are connected to the onset of plastic strain relaxation. [ABSTRACT FROM AUTHOR]
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