| Autor: |
Riadh Othmen, Kamel Rezgui, Cavanna, Antonella, Hakim Arezki, Fethullah Gunes, Hosni Ajlani, Ali Madouri, Meherzi Oueslati |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 115 Issue 21, p214309-1-214309-7, 7p, 1 Black and White Photograph, 2 Diagrams, 2 Charts, 3 Graphs |
| Abstrakt: |
In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts Δω of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene-InAs/GaAs QDs wherein the graphene plays a key role as a cap layer. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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