| Autor: |
Zvulun, E., Toker, G., Gurovich, V. Tz., Krasik, Ya. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2014, Vol. 115 Issue 20, p203301-1-203301-10, 10p, 5 Black and White Photographs, 4 Diagrams, 5 Graphs |
| Abstrakt: |
A semiconductor bridge (SCB) is a silicon device, used in explosive systems as the electrical initiator element. In recent years, SCB plasma has been extensively studied, both electrically and using fast photography and spectroscopic imaging. However, the value of the pressure buildup at the bridge remains unknown. In this study, we operated SCB devices in water and, using shadow imaging and reference beam interferometry, obtained the velocity of the shock wave propagation and distribution of the density of water. These results, together with a self-similar hydrodynamic model, were used to calculate the pressure generated by the exploding SCB. In addition, the results obtained showed that the energy of the water flow exceeds significantly the energy deposited into the exploded SCB. The latter can be explained by the combustion of the aluminum and silicon atoms released in water, which acts as an oxidizing medium. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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