| Autor: |
Yuan-Tao Zhang, Xiao-Chuan Xia, Bin Wu, Zhi-Feng Shi, Fan Yang, Xiao-Tian Yang, Bao-Lin Zhang, Guo-Tong Du |
| Předmět: |
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| Zdroj: |
Chinese Physics Letters; May2014, Vol. 31 Issue 5, p1-1, 1p |
| Abstrakt: |
p-ZnO:As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO:As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of ∼1017 cm−3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO:As by further introducing the p-ZnO/MgO/n-GaN heterostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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