| Autor: |
Sheng, Fengfeng, Yang, Jianrong, Sun, Shiwen, Zhou, Changhe, Yu, Huixian |
| Předmět: |
|
| Zdroj: |
Journal of Electronic Materials; Jul2014, Vol. 43 Issue 7, p2702-2708, 7p |
| Abstrakt: |
The influence of Cd-rich annealing at temperatures of 440-900 °C on the defect properties of Te-rich CdZnTe materials was studied. Cd-rich annealing at temperatures above the melting point of Te was confirmed to effectively reduce the size of Te-rich inclusions in the materials. However, dislocation multiplication occurred in the regions near Te-rich inclusions. Etch pit clusters were observed on the surfaces of annealed materials etched with Everson etchant. The etch pit clusters were much larger than the as-grown Te-rich inclusions. The dependence of the cluster size on that of the Te-rich inclusions and the annealing conditions was investigated. The density of etch pits in the normal region increased when the annealing temperature exceeded 750 °C. The mechanisms of the evolution of the Te-rich inclusions and the formation of new defects during the Cd-rich annealing are discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink