Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si0.02Zn0.98O thin films grown by pulsed laser deposition.

Autor:	Das, Amit K., Ajimsha, R. S., Kukreja, L. M.
Předmět:	METAL-insulator transitions PULSED laser deposition FREE electron theory of metals THIN films ELECTRICAL conductivity transitions SOLID state electronics
Zdroj:	Journal of Applied Physics; 2014, Vol. 115 Issue 19, p193705-1-193705-4, 4p, 5 Graphs
Abstrakt:	Metal to insulator transition was observed in Si0.02Zn0.98O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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