A study of ultra-high performance SiGe HBT devices on SOI.
| Autor: | Thibeault, Todd, Preisler, Edward, Zheng, Jie, Dong, Li, Chaudhry, Samir, Jordan, Scott, Racanelli, Marco |
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| Zdroj: | 2013 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 01/01/2013, p235-238, 4p |
| Databáze: | Complementary Index |
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