A high-resistivity SiGe BiCMOS technology for WiFi RF front-end-IC solutions.

Autor: Joseph, Alvin, Gambino, Jeff, Rassel, Robert M., Johnson, Eric, Ding, Hanyi, Parthasarthy, Shyam, Vanakuru, Venkata, Sharma, Santosh, Jaffe, Mark, Liu, Derrick, Zierak, Michael, Camillo-Castillo, Renata, Stamper, Anthony, Dunn, Jim
Zdroj: 2013 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 01/01/2013, p231-234, 4p
Databáze: Complementary Index