Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency.
| Autor: | Jain, Vibhor, Cheng, Peng, Gross, B. J., Camillo-Castillo, R., Pekarik, J. J., Adkisson, J. W., Liu, Qizhi, Gray, P. B., Kaushal, V., Harame, D., Divergilio, Adam W. |
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| Zdroj: | 2013 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 01/01/2013, p73-76, 4p |
| Databáze: | Complementary Index |
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