| Autor: |
Kamimura, Takafumi, Sasaki, Kohei, Hoi Wong, Man, Krishnamurthy, Daivasigamani, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu, Higashiwaki, Masataka |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/12/2014, Vol. 104 Issue 19, p1-5, 5p, 2 Diagrams, 4 Graphs |
| Abstrakt: |
The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al2O3, the conduction and valence band offsets at the interface were estimated to be 1.5±0.2 eV and 0.7±0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Al2O3/n-Ga2O3 (201) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al2O3/Ga2O3 interface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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