Autor: |
Rubish, V. M., Stefanovich, V. O., Maryan, V. M., Mykaylo, O. A., Shtets, P. P., Kaynts, D. I., Yurkin, I. M. |
Předmět: |
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Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2014, Vol. 17 Issue 1, p61-66, 6p |
Abstrakt: |
The structure and structural changes under the isothermal annealing of (GeS2)100-x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS2)100-x(SbSI)x glasses is basically built just of binary GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular fragments with homopolar Ge-Ge and S-S bonds. The phase structure arising in the glass matrix at crystallization corresponds to the structure of crystalline SbSI. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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