Development of perpendicularly magnetized Ta∣CoFeB∣MgO-based tunnel junctions at IBM (invited).

Autor: Worledge, D. C., Hu, G., Abraham, David W., Trouilloud, P. L., Brown, S.
Předmět:
Zdroj: Journal of Applied Physics; 2014, Vol. 115 Issue 17, p172601-1-172601-3, 3p
Abstrakt: The discovery of perpendicular magnetic anisotropy (PMA) in Ta∣CoFeB∣MgO and the subsequent development of perpendicularly magnetized tunnel junctions at IBM is reviewed. The fast-turnaround method used for screening materials for interface PMA by measuring the moment/area and anisotropy field of in-plane materials as a function of CoFeB thickness is presented, including the data as a function of seed-layer material which led to the discovery of PMA in Ta∣CoFeB∣MgO. Magnetic and electrical data are reported for the first PMA magnetic tunnel junction we made using this material. By inserting a thin Fe layer at the Ta∣CoFeB interface, a substantial increase in the PMA energy density was obtained. Pure Fe layers (which required the use of a TaMg seed) greatly improved the thermal stability, allowing annealing up to 400 °C. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index