I-V and C-V Characteristics of Y0.95Ca0.05MnO3/Si Film.

Autor: Dhruv, Davit, Joshi, Zalak, Ravalia, Ashish, Kansara, Sanjay, Pandya, D. D., Solanki, P. S., Kuberkar, D. G., Shah, N. A.
Předmět:
Zdroj: AIP Conference Proceedings; 2014, Vol. 1591, p1309-1311, 3p, 3 Graphs
Abstrakt: In this study, we report the results of the electrical property measurements on Ca2+- doped Y0.95Ca0.05MnO3 (YCM) manganite thin film grown on n-type Si- substrate, using chemical solution deposition (CSD) technique. I-V characteristics show that, film exhibits rectifying behavior with high electroresistance(ER) which decreases with temperature. It is shown that, charge transport follows space charge limited current (SCLC) mechanism. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index