| Autor: |
Meng-Meng, Cao, Xiao-Ru, Zhao, Li-Bing, Duan, Jin-Ru, Liu, Meng-Meng, Guan, Wen-Rui, Guo |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Apr2014, Vol. 23 Issue 4, p047805-047809, 5p |
| Abstrakt: |
Sb-doped ZnO thin films with different values of Sb content (from 0 to 1.1 at.%) are deposited by the sol–gel dip-coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy (UV-VIS) spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance (> 90%) in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence (PL) spectra revealed that the defect emission (around 450 nm) is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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