| Autor: |
Misuraca, Jennifer, Joon-Il Kim, Jun Lu, Kangkang Meng, Lin Chen, Xuezhe Yu, Jianhua Zhao, Peng Xiong, von Mólnar, Stephan |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 2/24/2014, Vol. 104 Issue 8, p1-4, 4p, 1 Chart, 4 Graphs |
| Abstrakt: |
The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al0.3Ga0.7As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistance-area product shows a strong increase with bias current for reverse bias and small forward bias until 150 µA, beyond which a weak dependence is observed. The spin lifetimes diminish substantially with increasing bias current. The dependence of the spin accumulation and lifetime diminish only moderately with temperature from 5K to 30K.V [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
