| Autor: |
Mnatsakanov, T T, Yurkov, S N, Levinshtein, M E, Cheng, L, Palmour, J W |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; May2014, Vol. 29 Issue 5, p055005-055009, 5p |
| Abstrakt: |
A computer simulation has been carried out to analyze and explain the specific features of the switch-on process in super-high-voltage (18 kV class) optically triggered 4H-SiC thyristors. It is shown that the previously experimentally observed two-stage character of the switch-on processes can be understood in a one-dimensional approach. The two-stage turn-on of the 18 kV structures is accounted for by the rather slow current rise in the structure with a very wide (160 µm) blocking base. In full agreement with the experimental results, a simulation in the frame of the same approximations demonstrated that, in the 12 kV class thyristor structures with a blocking base thickness of 90 µm, the current increases monotonically during the switch-on process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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