Passivation of SiC device surfaces by aluminum oxide.

Autor: Hallén, A, Usman, M, Suvanam, S, Henkel, C, Martin, D, Linnarsson, M K
Zdroj: IOP Conference Series: Materials Science & Engineering; 2014, Vol. 56 Issue 1, p012007-012014, 8p
Databáze: Complementary Index