Passivation of SiC device surfaces by aluminum oxide.
Autor: | Hallén, A, Usman, M, Suvanam, S, Henkel, C, Martin, D, Linnarsson, M K |
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Zdroj: | IOP Conference Series: Materials Science & Engineering; 2014, Vol. 56 Issue 1, p012007-012014, 8p |
Databáze: | Complementary Index |
Externí odkaz: |