13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications.

Autor: Song, Taejoong, Rim, Woojin, Jung, Jonghoon, Yang, Giyong, Park, Jaeho, Park, Sunghyun, Baek, Kang-Hyun, Baek, Sanghoon, Oh, Sang-Kyu, Jung, Jinsuk, Kim, Sungbong, Kim, Gyuhong, Kim, Jintae, Lee, Youngkeun, Kim, Kee Sup, Sim, Sang-Pil, Yoon, Jong Shik, Choi, Kyu-Myung
Zdroj: 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2014, p232-233, 2p
Databáze: Complementary Index