| Autor: |
YAN MING ZHOU, YANG ZHAO MA, ZHONG XIE, MING ZHI HE |
| Předmět: |
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| Zdroj: |
Surface Review & Letters; Apr2014, Vol. 21 Issue 2, p1450028-1-1450028-12, 12p |
| Abstrakt: |
Structure evolution and electric properties of tantalum nitride (TaN) films deposited on Al2O3-based ceramic and glass substrates by magnetron reactive sputtering were carried out as a function of the N2-to-Ar flow ratio. The TaN thin films on Al2O3-based ceramic substrates grow with micronclusters composed of numerous nanocrystallites, contains from single-phase of Ta2N grains to TaN, and exhibits high defect density, sheet resistance and negative TCR as the N2-to-Ar flow ratio continuously increases. However, the films on the glass substrates grow in the way of sandwich close-stack, contains from single-phase of Ta2 grains to TaN and Ta3N5 phases with the increase of N2-to-Ar flow ratio. These results indicate that the N2-to-Ar flow ratio and surface characteristic difference of substrates play a dominant effect on the structure and composition of the films, resulting in different electrical properties for the films on Al2O3-based ceramic and the samples on glass substrates. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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