| Autor: |
Malmros, Anna, Gamarra, Piero, Thorsell, Mattias, Forte-Poisson, Marie-Antoinette di, Lacam, Cedric, Tordjman, Maurice, Aubry, Raphaël, Zirath, Herbert, Rorsman, Niklas |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (C); Apr2014, Vol. 11 Issue 3/4, p924-927, 4p |
| Abstrakt: |
An InAlN/AlN/GaN HEMT with Au-free Ta-based ohmic contacts and a high-quality PECVD SiN pas-sivation is reported. The ohmic contacts were annealed at 550 °C, resulting in a contact resistance of 0.64 Ωmm. The gate length was 50 nm. The device performance and the process were evaluated by performing DC-, pulsed IV-, RF-, and load-pull measurements. It was observed that current slump was effectively mitigated by the passivation layer. The DC channel current density increased by 71 % to 1170 mA/mm at the knee of the IV curve, and the transconductance increased from 382 to 477 mS/mm after passivation. At the same time the gate leakage increased, and the extrinsic fmax decreased from 207 to 140 GHz. Output powers of 4.1 and 3.5 W/mm were measured after passivation at 31 and 40 GHz, respectively. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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