| Autor: |
Nikolaev, V., Golovatenko, A., Mynbaeva, M., Nikitina, I., Seredova, N., Pechnikov, A., Bougrov, V., Odnobludov, M. |
| Předmět: |
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| Zdroj: |
Physica Status Solidi (C); Apr2014, Vol. 11 Issue 3/4, p502-504, 3p |
| Abstrakt: |
The implementation of control over self-separation of thick GaN flayers grown by Hydride Vapor-Phase Epitaxy (HVPE) on Metal-Organic Chemical Vapor Deposition (MOCVD)-grown templates with patterned nano-column interlayer is reported. Both numerical simulation and experimental data show that separation of thick HVPE layers is provided by non-uniform redistribution of the growth stress. It is shown that the geometrical parameters of the nano-column structure such as fill factor and shape of the columns are most critical for self-separation effect. By adjusting the nano-column pattern, successful self-separation of thick HVPE layers from 2-inch structured MOCVD GaN/sapphire substrate was demonstrated. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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