| Autor: |
Cheong, Kuan Yew, Dimitrijev, Sima, Han, Jisheng, Harrison, H. Barry |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/2003, Vol. 93 Issue 9, p5682, 5p, 1 Black and White Photograph, 1 Chart, 6 Graphs |
| Abstrakt: |
A systematic electrical and physical characterization of gate oxides on 4H-SiC, grown in diluted N[sub 2]O at 1300 °C, has been performed. Electrical characterization by the high-frequency C-V technique, conductance technique, and slow trap profiling method reveals that the densities of interface and near-interface traps, and the effective oxide charge for gate oxides grown in 10% N[sub 2]O are the lowest, compared to gate oxides grown in 100% and 0.5% N[sub 2]O. These results are supported by physical characterizations using x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. It has been shown that carbon clusters, accumulated at the SiC-SiO[sub 2] interface, directly influence the roughness of the interface and the densities of the interface and near-interface traps. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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