| Autor: |
Stoklas, R, Gregušová, D, Hušeková, K, Marek, J, Kordoš, P |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Apr2014, Vol. 29 Issue 4, p045003-045007, 5p |
| Abstrakt: |
Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor (MOS) structures with Al2O3 and ZrO2 gate insulator were analyzed by capacitance–voltage (C–V) measurement. The influence of the voltage sweep range on the threshold voltage and capacitance hysteresis is presented first. The trapping effects are investigated by C–V measurement at varied voltage sweep rates ranged between 100 and 0.01 V s−1. The threshold voltage Vth and the hysteresis width ΔVhyst depended significantly on the sweep rate (Vth shift and ΔVhyst change up to ∼1.3 V). The Al2O3- and ZrO2-based MOS structures exhibited opposite Vth and ΔVhyst changes with the sweep rate. This points to different types of trapped charge in the structures investigated. The trapping effects that we observe resulted both from the capture/emission of electrons at the insulator/AlGaN interface and from the negative or positive fixed charge in the Al2O3 or ZrO2 insulators, respectively, at their different densities. This shows that C–V analysis with different voltage sweep rate might be a useful tool for an evaluation of trapped charge in MOS structures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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