| Autor: |
Felix, J F, Aziz, M, Araujo, C I L de, Azevedo, W M de, Anjos, V, Jr, E F da Silva, Henini, M |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Apr2014, Vol. 29 Issue 4, p045021-045029, 9p |
| Abstrakt: |
The electrical and optical properties of heterojunctions formed by thermally deposited ZnO thin films on n-type 4H-SiC substrates have been investigated. Current–voltage characteristics of the fabricated light emitting devices revealed excellent rectifying behaviors with a typical leakage current lower than 1 nA at a reverse bias of −3 V, and with a forward current at 3 V in the range of 2 mA. A study of the electroluminescent characteristics of ZnO/SiC heterojunctions over the temperature range of 50–450 K showed an emission peak around 410 nm and a broad defect-related electroluminescence at room temperature in the visible range for a forward current of 300 mA. Electrically active deep level centers in ZnO and n-type 4H-SiC epilayers have been investigated by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS (LDLTS). Additionally, LDLTS has successfully been employed to resolve the closely spaced hole trap energy levels. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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