| Autor: |
Abrutis, Adulfas, Silimavicus, Laimis, Kubilius, Virgaudas, Murauskas, Tomas, Saltyte, Zita, Kuprenaite, Sabina, Plausinaitiene, Valentina |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Mar/Apr2014, Vol. 32 Issue 2, p1-5, 5p |
| Abstrakt: |
Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2 cm from the substrate holder. The wires were heated by an AC current in the range of 0-10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In2O3 films; at a current of 6-10 A, growth rates were increased by a factor of ≈10-20 compared with those of traditional CVD at the same substrate temperature (400 ℃). In-doped ZnO films with thickness of ≈150 nm deposited on sapphire-R grown at a wire current of 9A exhibited a resistivity of ≈2×10-3 Xcm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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