| Autor: |
Mutta, Geeta Rani, Venturi, Giulia, Castaldini, Antonio, Cavallini, Anna, Meneghini, Matteo, Zanoni, Enrico, Meneghesso, Gaudenzio, Dandan Zhu, Humphreys, Colin |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2014, Vol. 1583, p315-318, 4p, 3 Graphs |
| Abstrakt: |
We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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