| Autor: |
Khirunenko, L. I., Pomozov, Yu. V., Sosnin, M. G., Abrosimov, N. V., Riemann, H. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2014, Vol. 1583, p100-104, 5p, 3 Graphs |
| Abstrakt: |
Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ~80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm-1 are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180-240 K, belong to IO complexes, while the bands at 713 and 803 cm-1, which emerge after annealing at T>220 K, are associated with I2O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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